| PART |
Description |
Maker |
| IXFR34N80 |
Single MOSFET Die Avalanche Rated
|
IXYS Corporation
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| PSMG100-05 PSMG100_05 PSMG100/05 PSMG10005 |
Power MOSFET
Single MOSFET Die
|
Powersem GmbH
Meder Electronic
|
| IXFN340N06 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IXFN44N80 |
HiPerFETTM Power MOSFETs Single MOSFET Die
|
IXYS[IXYS Corporation]
|
| IXFN280N085 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IRF7E3704 IRF7E3704-15 |
Avalanche Energy Ratings
HEXFET POWER MOSFET SURFACE MOUNT (LCC-18)
20V Single N-Channel Hi-Rel MOSFET in a LCC-18 package
|
IRF[International Rectifier]
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| JANTX2N6798 JANTXV2N6798 2N6798 |
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
| IRF230 JANTXV2N6758 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
International Rectifier
|
